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Avalanche breakdown (or the avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche.
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified reverse bias voltage. The junction of an avalanche diode is designed to prevent current concentration and resulting hot spots, so that the diode is undamaged by the breakdown.
For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
power MOSFET A metal oxide semiconductor field effect transistor suitable for use in circuits handling more than a watt of power. power plant A facility that converts other energy forms into electric power. power rating The nominal power that an apparatus or machine can handle, with specified or customary temperature rise and life expectancy.
A plasma begins with a rare natural 'background' ionization event of a neutral air molecule, perhaps as the result of photoexcitation or background radiation.If this event occurs within an area that has a high potential gradient, the positively charged ion will be strongly attracted toward, or repelled away from, an electrode depending on its polarity, whereas the electron will be accelerated ...
The device operates by shunting excess current when the induced voltage exceeds the avalanche breakdown potential. It is a clamping device, suppressing all overvoltages above its breakdown voltage. It automatically resets when the overvoltage goes away, but absorbs much more of the transient energy internally than a similarly rated crowbar device.
With the vertical structure, the component area is roughly proportional to the current it can sustain, and the component thickness (actually the N-epitaxial layer thickness) is proportional to the breakdown voltage. [75] Power MOSFETs with lateral structure are mainly used in high-end audio amplifiers and high-power PA systems.