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Process annealing, also called intermediate annealing, subcritical annealing, or in-process annealing, is a heat treatment cycle that restores some of the ductility to a product being cold-worked so it can be cold-worked further without breaking. The temperature range for process annealing ranges from 260 °C (500 °F) to 760 °C (1400 °F ...
Nucleic acid thermodynamics is the study of how temperature affects the nucleic acid structure of double-stranded DNA (dsDNA). The melting temperature (Tm) is defined as the temperature at which half of the DNA strands are in the random coil or single-stranded (ssDNA) state. Tm depends on the length of the DNA molecule and its specific ...
Simulated annealing. Simulated annealing can be used to solve combinatorial problems. Here it is applied to the travelling salesman problem to minimize the length of a route that connects all 125 points. Travelling salesman problem in 3D for 120 points solved with simulated annealing. Simulated annealing (SA) is a probabilistic technique for ...
The recrystallization temperature is temperature at which recrystallization can occur for a given material and processing conditions. This is not a set temperature and is dependent upon factors including the following: [3] Increasing annealing time decreases recrystallization temperature
Thermomechanical Analysis. Thermomechanical analysis (TMA) is a technique used in thermal analysis, a branch of materials science which studies the properties of materials as they change with temperature. Thermomechanical analysis is a subdiscipline of the thermomechanometry (TM) technique. [1]
The three common techniques are hydrogen plasma anneal, forming gas anneal, or high temperature steam anneal. Traditional methods used Hydrogen Radical Annealing (HRA), which uses hydrogen gas and microwave energy. Forming Gas Annealing (FGA) uses H 2 at 400–500 °C. A new approach is the use of High Temperature Steam Annealing (HSA), which ...
Anneal furnace, 2018. Furnace annealing is a process used in semiconductor device fabrication which consist of heating multiple semiconductor wafers in order to affect their electrical properties. Heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film to film or film to wafer substrate ...
To anneal glass, it is necessary to heat it to its annealing temperature, at which its viscosity, η, drops to 10 13 Poise (10 13 dyne-second/cm 2). [2] For most kinds of glass, this annealing temperature is in the range of 454–482 °C (849–900 °F) [ citation needed ] , and is the so-called stress -relief point or annealing point of the glass.