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IEEE 200-1975 or "Standard Reference Designations for Electrical and Electronics Parts and Equipments" is a standard that was used to define referencing naming systems for collections of electronic equipment. IEEE 200 was ratified in 1975. The IEEE renewed the standard in the 1990s, but withdrew it from active support shortly thereafter.
kg⋅m 2 ⋅s −3 ⋅A −2: ρ resistivity: ohm metre: Ω⋅m kg⋅m 3 ⋅s −3 ⋅A −2: P electric power: watt: W = V⋅A kg⋅m 2 ⋅s −3: C capacitance: farad: F = C/V kg −1 ⋅m −2 ⋅A 2 ⋅s 4: Φ E electric flux: volt metre: V⋅m kg⋅m 3 ⋅s −3 ⋅A −1: E electric field strength volt per metre: V/m = N/C kg⋅m⋅A −1 ...
Electrical breakdown in an electric discharge showing the ribbon-like plasma filaments from a Tesla coil.. In electronics, electrical breakdown or dielectric breakdown is a process that occurs when an electrically insulating material (a dielectric), subjected to a high enough voltage, suddenly becomes a conductor and current flows through it.
TO-XX: wide range of small pin count packages often used for discrete parts like transistors or diodes. TO-3: Panel-mount with leads; TO-5: Metal can package with radial leads; TO-18: Metal can package with radial leads; TO-39; TO-46; TO-66: Similar shape to the TO-3 but smaller; TO-92: Plastic-encapsulated package with three leads
A diode intended for regular operation in the reverse, avalanche breakdown, mode. Used as a voltage reference, noise source, and in certain classes of microwave oscillator device. average rectified value The average value of an alternating current waveform, taking the absolute value of the waveform. The average value is generally different from ...
Electronic components have a wide range of failure modes. These can be classified in various ways, such as by time or cause. Failures can be caused by excess temperature, excess current or voltage, ionizing radiation, mechanical shock, stress or impact, and many other causes. In semiconductor devices, problems in the device package may cause ...
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).
where is the breakdown voltage in volts, is the pressure in pascals, is the gap distance in meters, is the secondary-electron-emission coefficient (the number of secondary electrons produced per incident positive ion), is the saturation ionization in the gas at a particular / (electric field/pressure), and is related to the excitation and ...