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Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3] He calls it "a theoretical rectification formula giving the maximum rectification", with a footnote referencing a paper by Carl Wagner , Physikalische Zeitschrift 32 , pp ...
Ideal diode with a series voltage source and resistor. The I-V characteristic of the final circuit looks like this: I-V characteristic of an ideal diode with a series voltage source and resistor. The real diode now can be replaced with the combined ideal diode, voltage source and resistor and the circuit then is modelled using just linear elements.
The circuit is treated as a completely linear network of ideal diodes. Every time a diode switches from on to off or vice versa, the configuration of the linear network changes. Adding more detail to the approximation of equations increases the accuracy of the simulation, but also increases its running time.
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
Zener diodes have a low breakdown voltage. A standard value for breakdown voltage is for instance 5.6 V. This means that the voltage at the cathode cannot be more than about 5.6 V higher than the voltage at the anode (though there is a slight rise with current), because the diode breaks down, and therefore conducts, if the voltage gets any higher.
Using these ideal diodes rather than standard diodes for solar electric panel bypass, reverse-battery protection, or bridge rectifiers reduces the amount of power dissipated in the diodes, improving efficiency and reducing the size of the circuit board and the weight of the heat sink required to deal with the power dissipation.
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. [1]
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...