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Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
CMOS memory was commercialized by RCA, which launched a 288-bit CMOS SRAM memory chip in 1968. [23] CMOS memory was initially slower than NMOS memory, which was more widely used by computers in the 1970s. [24] In 1978, Hitachi introduced the twin-well CMOS process, with its HM6147 (4 kb SRAM) memory chip, manufactured with a 3 μm process. The ...
The physical layout of the DRAM cells in an array is typically designed so that two adjacent DRAM cells in a column share a single bitline contact to reduce their area. DRAM cell area is given as nF 2, where n is a number derived from the DRAM cell design, and F is the smallest feature size of a given process technology. This scheme permits ...
VCM inserts an SRAM cache of 16 "channel" buffers, each 1/4 row "segment" in size, between DRAM banks' sense amplifier rows and the data I/O pins. "Prefetch" and "restore" commands, unique to VCSDRAM, copy data between the DRAM's sense amplifier row and the channel buffers, while the equivalent of SDRAM's read and write commands specify a ...
SRAM is less dense and more expensive per bit than DRAM, but faster and does not require memory refresh. It is used for smaller cache memories in computers. CAM ( Content-addressable memory ) – This is a specialized type in which, instead of accessing data using an address, a data word is applied and the memory returns the location if the ...
In integrated circuit design, physical design is a step in the standard design cycle which follows after the circuit design.At this step, circuit representations of the components (devices and interconnects) of the design are converted into geometric representations of shapes which, when manufactured in the corresponding layers of materials, will ensure the required functioning of the components.
A great deal of design effort, and often power and silicon area are expended making the caches as fast as possible. The simplest cache is a virtually indexed direct-mapped cache. The virtual address is calculated with an adder, the relevant portion of the address extracted and used to index an SRAM, which returns the loaded data.
On August 18, 2008, AMD, Freescale, IBM, STMicroelectronics, Toshiba, and the College of Nanoscale Science and Engineering (CNSE) announced that they jointly developed and manufactured a 22 nm SRAM cell, built on a traditional six-transistor design on a 300 mm wafer, which had a memory cell size of just 0.1 μm 2. [7]