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The superconducting nanowire single-photon detector (SNSPD or SSPD) is a type of optical and near-infrared single-photon detector based on a current-biased superconducting nanowire. [1] It was first developed by scientists at Moscow State Pedagogical University and at the University of Rochester in 2001.
Corn-like nanowire is a one-dimensional nanowire with interconnected nanoparticles on the surface, providing a large percentage of reactive facets. TiO 2 corn-like nanowires were first prepared by a surface modification concept using surface tension stress mechanism through a two consecutive hydrothermal operation, and showed an increase of 12% ...
Nanowire lasers can be grown site-selectively on Si/SOI wafers with conventional MBE techniques, allowing for pristine structural quality without defects. Nanowire lasers using the group-III nitride and ZnO materials systems have been demonstrated to emit in the visible and ultraviolet, however infrared at the 1.3–1.55 μm is important for telecommunication bands. [3]
Nanowire lasers are similar to Fabry–Pérot cavity in mechanism, but different in quantitative reflection coefficients [30] [31] High reflectivity of nanowire and flat end facets of the wire constitute a good resonant cavity, in which photons can be bound between the two ends of the nanowire to limit the light energy to the axial direction of ...
Schematic of silicon nanowire. Silicon nanowires, also referred to as SiNWs, are a type of semiconductor nanowire most often formed from a silicon precursor by etching of a solid or through catalyzed growth from a vapor or liquid phase. Such nanowires have promising applications in lithium-ion batteries, thermoelectrics and sensors.
Simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45V. Nanoelectronics holds the promise of making computer processors more powerful than are possible with conventional semiconductor fabrication ...
Thus the electric transport properties will be changed. The second kind of the piezotronic device is that one end of the nanowire is fixed with electrode, while the other end is free. In this case, when a force is applied at the free end of the nanowire to bend it, the piezopotential distribution will be perpendicular to the axis of the nanowire.
Full-spectrum photography is a subset of multispectral imaging, defined among photography enthusiasts as imaging with consumer cameras the full, broad spectrum of a film or camera sensor bandwidth. In practice, specialized broadband/full-spectrum film captures visible and near infrared light, commonly referred to as the "VNIR". [1]
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