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Figure 1: Basic NPN common collector circuit (neglecting biasing details).. In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
In this circuit, the base terminal of the transistor serves as the input, the collector is the output, and the emitter is common to both (for example, it may be tied to ground reference or a power supply rail), hence its name. The analogous FET circuit is the common-source amplifier, and the analogous tube circuit is the common-cathode amplifier.
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...
Figure 1: Basic NPN common base circuit (neglecting biasing details). In electronics, a common-base (also known as grounded-base) amplifier is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a current buffer or voltage amplifier.
In this phenomenon, when the base of an NPN transistor is turned on, enough current flows through the emitter-collector circuit that the silicon in the immediate vicinity of the emitter-ground connection is pulled partially high, sometimes by several volts, thus raising the local ground, as perceived at the gate, to a value significantly above ...
Ebers–Moll model for an NPN transistor. [28] I B, I C and I E are the base, collector and emitter currents; I CD and I ED are the collector and emitter diode currents; α F and α R are the forward and reverse common-base current gains. Ebers–Moll model for a PNP transistor Approximated Ebers–Moll model for an NPN transistor in the ...
For NPN open collector outputs, the emitter of the NPN transistor is internally connected to ground, [1] so the NPN open collector internally forms either a short-circuit (technically low impedance or "low-Z") connection to the low voltage (which could be ground) when the transistor is switched on, or an open-circuit (technically high impedance ...