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PC100 is a standard for internal removable computer random-access memory, defined by the JEDEC. PC100 refers to Synchronous DRAM operating at a clock frequency of 100 MHz, on a 64-bit-wide bus, at a voltage of 3.3 V. PC100 is available in 168-pin DIMM and 144-pin SO-DIMM form factors. PC100 is backward compatible with PC66 and was superseded by ...
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Memory refresh is a process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information. [1] Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random ...
DDR5 SDRAM. Double Data Rate 5 Synchronous Dynamic Random-Access Memory (DDR5 SDRAM) is a type of synchronous dynamic random-access memory. Compared to its predecessor DDR4 SDRAM, DDR5 was planned to reduce power consumption, while doubling bandwidth. [5] The standard, originally targeted for 2018, [6] was released on July 14, 2020.
Rambus DRAM was developed for high-bandwidth applications and was positioned by Rambus as replacement for various types of contemporary memories, such as SDRAM. RDRAM is a serial memory bus . DRDRAM was initially expected to become the standard in PC memory , especially after Intel agreed to license the Rambus technology for use with its future ...
SDRAM (Synchronous dynamic random-access memory) – This added circuitry to the DRAM chip which synchronizes all operations with a clock signal added to the computer's memory bus. This allowed the chip to process multiple memory requests simultaneously using pipelining , to increase the speed.
Nowadays, synchronous SRAM (e.g. DDR SRAM) is rather employed similarly to synchronous DRAM – DDR SDRAM memory is rather used than asynchronous DRAM. Synchronous memory interface is much faster as access time can be significantly reduced by employing pipeline architecture. Furthermore, as DRAM is much cheaper than SRAM, SRAM is often replaced ...
The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS: The minimum number of clock cycles required between a row active command and issuing the precharge command. This is the time needed to internally refresh the row, and overlaps with T RCD. In SDRAM modules, it is simply T RCD ...