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The specification defined standards for ×4, ×8 and ×16 memory devices with capacities of 2, 4, 8 and 16 Gbit. [1] [47] In addition to bandwidth and capacity variants, DDR4 modules can optionally implement: ECC, which is an extra data byte lane used for correcting minor errors and detecting major errors for better reliability. Modules with ...
In the fields of digital electronics and computer hardware, multi-channel memory architecture is a technology that increases the data transfer rate between the DRAM memory and the memory controller by adding more channels of communication between them. Theoretically, this multiplies the data rate by exactly the number of channels present.
DDR memory bus width per channel is 64 bits (72 for ECC memory). Total module bit width is a product of bits per chip and number of chips. It also equals number of ranks (rows) multiplied by DDR memory bus width. Consequently, a module with a greater number of chips or using ×8 chips instead of ×4 will have more ranks.
A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).
With the introduction of the Intel 840 (Pentium III), Intel 850 (Pentium 4), Intel 860 (Pentium 4 Xeon) chipsets, Intel added support for dual-channel PC-800 RDRAM, doubling bandwidth to 3200 MB/s by increasing the bus width to 32 bits. This was followed in 2002 by the Intel 850E chipset, which introduced PC-1066 RDRAM, increasing total dual ...
The highest-rated DDR2 modules in 2009 operate at 533 MHz (1066 MT/s), compared to the highest-rated DDR modules operating at 200 MHz (400 MT/s). At the same time, the CAS latency of 11.2 ns = 6 / (bus clock rate) for the best PC2-8500 modules is comparable to that of 10 ns = 4 / (bus clock rate) for the best PC-3200 modules.
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For example, the Intel Westmere 5600 series of processors access memory using interleaving, wherein memory access is distributed across three channels. If two memory DIMMs are used per channel, there is a reduction of maximum memory bandwidth for this configuration with UDIMM by some 5% in comparison to RDIMM. [2] [3]
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