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Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
Mask ROMs are factory programmable only and typically used for large-volume products which are not required to be updated after the memory device is manufactured. ...
It is referred to as non-volatile memory or NVRAM because, after the system loses power, it does retain state by virtue of the CMOS battery. When the battery fails, BIOS settings are reset to their defaults. The battery can also be used to power a real time clock (RTC) and the RTC, NVRAM and battery may be integrated into a single component.
A NVDIMM (pronounced "en-vee-dimm") or non-volatile DIMM is a type of persistent random-access memory for computers using widely used DIMM form-factors. Non-volatile memory is memory that retains its contents even when electrical power is removed, for example from an unexpected power loss, system crash, or normal shutdown.
nvSRAM is a type of non-volatile random-access memory (NVRAM). [1] [2] nvSRAM extends the functionality of basic SRAM by adding non-volatile storage such as an EEPROM to the SRAM chip. In operation, data is written to and read from the SRAM portion with high-speed access; the data in SRAM can then be stored into or retrieved from the non ...
Development of 3D XPoint began around 2012. [8] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM ...
Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952.
One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm. ReRAM bears some similarities to conductive-bridging RAM (CBRAM) and phase-change memory (PCM) in that they change dielectric material properties. CBRAM involves one electrode providing ions that dissolve readily in an electrolyte material, while PCM ...