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IBA (Ion Beam Applications SA) is a medical technology company based in Louvain-la-Neuve. The company was founded in 1986 by Yves Jongen within the Cyclotron Research Center of the University of Louvain (UCLouvain) and became a university spin-off. It employs about 1500 people in 40 locations. [1]
A second accelerator, called CYCLONE30, was designed and built by the Cyclotron Research Centre team between 1984 and 1987: mainly designed for industrial and medical applications, it is mainly used for isotope production. [15] [16] Further models of CYCLONE30 were built by Ion Beam Applications. [17]
Ion beam application, etching, or sputtering, is a technique conceptually similar to sandblasting, but using individual atoms in an ion beam to ablate a target. Reactive ion etching is an important extension that uses chemical reactivity to enhance the physical sputtering effect.
Ion beam analysis (IBA) is an important family of modern analytical techniques involving the use of MeV ion beams to probe the composition and obtain elemental depth profiles in the near-surface layer of solids. IBA is not restricted to MeV energy ranges.
As the input parameters, it needs the ion type and energy (in the range 10 eV – 2 GeV) and the material of one or several target layers. As the output, it lists or plots the three-dimensional distribution of the ions in the solid and its parameters, such as penetration depth, its spread along the ion beam (called straggle) and perpendicular to it, all target atom cascades in the target are ...
Learn how to download and install or uninstall the Desktop Gold software and if your computer meets the system requirements.
Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. [1] Ion beam deposition setup with mass separator. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. [2] In the ion source ...
PIII-process with ECR-plasma source and magnetron. Plasma-immersion ion implantation (PIII) [1] or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to ...