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The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state. [1]
MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI-thyristor. [1]The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a voltage regulation element.
A thyristor (/ θ aɪ ˈ r ɪ s t ər /, from a combination of Greek language θύρα, meaning "door" or "valve", and transistor [1]) is a solid-state semiconductor device which can be thought of as being a highly robust and switchable diode, allowing the passage of current in one direction but not the other, often under control of a gate electrode, that is used in high power applications ...
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise. [1] It is a vertical structure device with short multichannel. The device was originally known as a VFET, with V being short for vertical. [2]
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Static induction thyristor; Static induction transistor; Solid-state relay; Static relay; T. Thyristor; TRIAC; Trisil This page was last edited on 23 March 2013, at ...
Static induction thyristor; Static induction transistor; Solaristor; Solid-state lighting; Stabistor; T. Trancitor; Transistor This page was last edited on 31 October ...
Static characteristic of an IGBT In 1978 J. D. Plummer and B. Scharf patented a NPNP transistor device combining MOS and bipolar capabilities for power control and switching. [ 15 ] [ 16 ] The development of IGBT was characterized by the efforts to completely suppress the thyristor operation or the latch-up in the four-layer device because the ...