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In computing, a memory module or RAM stick is a printed circuit board on which memory integrated circuits are mounted. [ 1 ] Memory modules permit easy installation and replacement in electronic systems, especially computers such as personal computers , workstations , and servers .
An expanded RAM module capable of storing 256 bytes, utilizing the entire 8-bit address space. With the help of segmentation registers, the RAM module can be further expanded to a 16-bit address space, matching the standard for 8-bit computers. A stack register that allows incrementing and decrementing the stack pointer.
DDR2 is a 240-pin module, DDR is a 184-pin module. Notebooks have 200-pin SO-DIMMs for DDR and DDR2; however, the notch on DDR2 modules is in a slightly different position than on DDR modules. Higher-speed DDR2 DIMMs can be mixed with lower-speed DDR2 DIMMs, although the memory controller will operate all DIMMs at same speed as the lowest-speed ...
Double data rate (DDR) memory controllers are used to drive DDR SDRAM, where data is transferred on both rising and falling edges of the system's memory clock.DDR memory controllers are significantly more complicated when compared to single data rate controllers, [citation needed] but they allow for twice the data to be transferred without increasing the memory's clock rate or bus width.
It was packaged as a 184-pin RIMM (Rambus in-line memory module) form factor, similar to a DIMM (dual in-line memory module). Data is transferred on both the rising and falling edges of the clock signal, a technique known as DDR. To emphasize the advantages of the DDR technique, this type of RAM was marketed at speeds twice the actual clock ...
Memory timings or RAM timings describe the timing information of a memory module or the onboard LPDDRx. Due to the inherent qualities of VLSI and microelectronics, memory chips require time to fully execute commands. Executing commands too quickly will result in data corruption and results in system instability.
Compression Attached Memory Module (CAMM) is a memory module form factor which uses a land grid array, and developed at Dell by engineer Tom Schnell as a replacement for DIMMs and SO-DIMMs which use edge connectors and had been in use for about 25 years. [1] The first SO-DIMMs were introduced by JEDEC in 1997. [2] [3] [4] [5]
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .