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A 2-inch diameter gallium oxide wafer is pictured at the Hangzhou International Science and Innovation Center of Zhejiang University in Hangzhou, Zhejiang province, China, on May 30, 2022.
(Reuters) - China said on July 3 it would restrict exports of two metals used in semiconductors and electric vehicles, escalating a technology war with the United States and potentially causing ...
China's announcement comes after Washington launched its third crackdown in three years on China's semiconductor industry on Monday, curbing exports to 140 companies, including chip equipment ...
BANGKOK (AP) — China announced Tuesday it is banning exports to the United States of gallium, germanium, antimony and other key high-tech materials with potential military applications. The Chinese Commerce Ministry announced the move after the Washington expanded its list of Chinese companies subject to export controls on computer chip ...
Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga 2 O 3. It is actively studied for applications in power electronics, phosphors, and gas sensing. [5] [6] [7] The compound has several polymorphs, of which the monoclinic β-phase is the most stable.
Where these export controls are effective in slowing the PRC's growing advantage in the most advanced semiconductor technology, it does not significantly impact China's ability to continue manufacturing older, "legacy", chips which are still widely used and in demand for a plethora of applications such as automobiles, renewable technology ...
China announced Tuesday it is banning exports to the United States of gallium, germanium, antimony and other key high-tech materials with potential military applications, as a general principle ...
Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [7] [8] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [9] and described in a 1952 publication. [10]