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In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
Depending on the model, increased temperature may either increase or decrease carrier mobility, applied electric field can increase mobility by contributing to thermal ionization of trapped charges, and increased concentration of localized states increases the mobility as well. Charge transport in the same material may have to be described by ...
There are two recognized types of charge carriers in semiconductors.One is electrons, which carry a negative electric charge.In addition, it is convenient to treat the traveling vacancies in the valence band electron population as a second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron.
where the js are the current densities of electrons (e) and holes (p), the μs the charge carrier mobilities, E is the electric field, n and p the number densities of charge carriers, the Ds are diffusion coefficients, and x is position. The first term of the equations is the drift current, and the second term is the diffusion current.
The drift velocity is the average velocity of the charge carriers in the drift current. The drift velocity, and resulting current, is characterized by the mobility; for details, see electron mobility (for solids) or electrical mobility (for a more general discussion).
Electrical mobility is the ability of charged particles (such as electrons or protons) to move through a medium in response to an electric field that is pulling them. The separation of ions according to their mobility in gas phase is called ion mobility spectrometry, in liquid phase it is called electrophoresis.
The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a ...
In general, carriers will exhibit ballistic conduction when where is the length of the active part of the device (e.g., a channel in a MOSFET). λ M F P {\displaystyle \lambda _{\rm {MFP}}} is the mean free path for the carrier which can be given by Matthiessen's rule , written here for electrons: