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Metal-oxide varistor manufactured by Siemens & Halske AG. Modern varistor schematic symbol, which is the same as a thermistor symbol [1] A varistor (a.k.a. voltage-dependent resistor (VDR)) is a surge protecting electronic component with an electrical resistance that varies with the applied voltage. [2]
The IEEE 315 standard contains a list of Class Designation Letters to use for electrical and electronic assemblies. For example, the letter R is a reference prefix for the resistors of an assembly, C for capacitors, K for relays. Industrial electrical installations often use reference designators according to IEC 81346.
Metal oxide varistor (MOV), surge absorber, TVS – Over-voltage protection; Inrush current limiter – protection against initial Inrush current; Gas discharge tube – protection against high voltage surges; Spark gap – electrodes with a gap to arc over at a high voltage; Lightning arrester – spark gap used to protect against lightning ...
Wire crossover symbols for circuit diagrams. The CAD symbol for insulated crossing wires is the same as the older, non-CAD symbol for non-insulated crossing wires. To avoid confusion, the wire "jump" (semi-circle) symbol for insulated wires in non-CAD schematics is recommended (as opposed to using the CAD-style symbol for no connection), so as to avoid confusion with the original, older style ...
Cross-sectional view of a MOSFET type field-effect transistor, showing source, gate and drain terminals, and insulating oxide layer. The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET ...
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
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NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]