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The g m of bipolar small-signal transistors varies widely, being proportional to the collector current. It has a typical range of 1 to 400 mS. The input voltage change is applied between the base/emitter and the output is the change in collector current flowing between the collector/emitter with a constant collector/emitter voltage.
3D model of a TO-92 package, commonly used for small bipolar transistors. A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier.
A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. [1]
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
Using the body formulas above, is directly proportional to , and , which is the parameter for oxide thickness. Thus, the thinner the oxide thickness, the lower the threshold voltage. Although this may seem to be an improvement, it is not without cost; because the thinner the oxide thickness, the higher the subthreshold leakage current through ...
For larger source impedances, the gain is determined by the resistor ratio R L / R S, and not by the transistor properties, which can be an advantage where insensitivity to temperature or transistor variations is important. An alternative to the use of the hybrid-pi model for these calculations is a general technique based upon two-port ...
In electronics, a common-source amplifier is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage or transconductance amplifier. The easiest way to tell if a FET is common source, common drain, or common gate is to examine where the signal enters and leaves. The remaining terminal is ...
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