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If the gate voltage is below the threshold voltage (left figure), the "enhancement-mode" transistor is turned off and ideally there is no current from the drain to the source of the transistor. In fact, there is a current even for gate biases below the threshold ( subthreshold leakage ) current, although it is small and varies exponentially ...
The subthreshold slope is a feature of a MOSFET's current–voltage characteristic.. In the subthreshold region, the drain current behaviour—though being controlled by the gate terminal—is similar to the exponentially decreasing current of a forward biased diode.
In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.
Johnson's figure of merit is a measure of suitability of a semiconductor material for high frequency power transistor applications and requirements. More specifically, it is the product of the charge carrier saturation velocity in the material and the electric breakdown field under same conditions, first proposed by Edward O. Johnson of RCA in 1965.
The intersections of the load line with the transistor characteristic curves represent the circuit-constrained values of I C and V CE at different base currents. [2] If the transistor could pass all the current available, with no voltage dropped across it, the collector current would be the supply voltage V CC over R L. This is the point where ...
In electronics, a common-source amplifier is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage or transconductance amplifier. The easiest way to tell if a FET is common source, common drain, or common gate is to examine where the signal enters and leaves. The remaining terminal is ...
The transistor continuously monitors V diff and adjusts its emitter voltage to equal V in minus the mostly constant V BE (approximately one diode forward voltage drop) by passing the collector current through the emitter resistor R E. As a result, the output voltage follows the input voltage variations from V BE up to V +; hence the name ...
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width , thereby decreasing the width of the charge carrier portion of ...
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