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The photonic band gap (PBG) is essentially the gap between the air-line and the dielectric-line in the dispersion relation of the PBG system. To design photonic crystal systems, it is essential to engineer the location and size of the bandgap by computational modeling using any of the following methods:
The concept of hyperuniformity [28] has broadened the range of photonic band gap materials, beyond photonic crystals. By applying the technique in supersymmetric quantum mechanics , a new class of optical disordered materials has been suggested, [ 29 ] which support band gaps perfectly equivalent to those of crystals or quasicrystals .
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap (DBGSC) or an indirect band gap (IDBGSC). The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are ...
Alternatively, one can create a photonic bandgap photonic crystal fiber, in which the light is confined by a photonic bandgap created by the microstructured cladding—such a bandgap, properly designed, can confine light in a lower-index core and even a hollow (air) core. Bandgap fibers with hollow cores can potentially circumvent limits ...
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single crystals are orange, but strongly doped wafers appear darker due to free-carrier absorption.
Narrow-gap materials made it possible to realize satellite remote sensing, [6] photonic integrated circuits for telecommunications, [7] [8] [9] and unmanned vehicle Li-Fi systems, [10] in the regime of Infrared detector and infrared vision.
Technologically, colloidal crystals have found application in the world of optics as photonic band gap (PBG) materials (or photonic crystals). Synthetic opals as well as inverse opal configurations are being formed either by natural sedimentation or applied forces, both achieving similar results: long-range ordered structures which provide a ...
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.