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The key to the development of the transistor was the further understanding of the process of the electron mobility in a semiconductor. It was realized that if there were some way to control the flow of the electrons from the emitter to the collector of this newly discovered diode, an amplifier could be built.
Their low efficiency required a much higher forward voltage to be applied (typically 1.4 to 1.7 V per "cell", with multiple cells stacked so as to increase the peak inverse voltage rating for application in high voltage rectifiers), and required a large heat sink (often an extension of the diode's metal substrate), much larger than the later ...
An active-low OR diode logic gate is formed by a keypad containing diodes at each switch, all connected to a shared pull-up resistor. When no switch is closed, the pull-up keeps the output high. But when the switch for any key connects to ground, the output goes low. This OR result can be used as an interrupt signal to indicate that any key has ...
A diode-OR circuit is used in electronics to isolate two or more voltage sources. There are two typical implementations: There are two typical implementations: When a DC supply voltage needs to be generated from one of a number of different sources, for example when terminating a parallel SCSI bus, a very simple circuit like this can be used:
While standard silicon diodes have a forward voltage drop of about 0.7 V and germanium diodes 0.3 V, Schottky diodes' voltage drop at forward biases of around 1 mA is in the range of 0.15 V to 0.46 V (see the 1N5817 [6] and 1N5711 [7]), which makes them useful in voltage clamping applications and prevention of transistor saturation.
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
The PIN diode obeys the standard diode equation for low-frequency signals. At higher frequencies, the diode looks like an almost perfect (very linear, even for large signals) resistor. The P-I-N diode has a relatively large stored charge adrift in a thick intrinsic region. At a low-enough frequency, the stored charge can be fully swept and the ...
Three 1N4148 diodes in glass DO-35 axial package. The black band on the right is the cathode side. Diode schematic symbol vs cathode marking on the package. The 1N4148 is a standard silicon switching signal diode. It is one of the most popular and long-lived switching diodes because of its dependable specifications and low cost.