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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
In SI units, this becomes = = =. (The units of R H are usually expressed as m 3 /C, or Ω·cm/G, or other variants.) As a result, the Hall effect is very useful as a means to measure either the carrier density or the magnetic field.
Free carrier concentration is the concentration of free carriers in a doped semiconductor. It is similar to the carrier concentration in a metal and for the purposes of calculating currents or drift velocities can be used in the same way. Free carriers are electrons that have been introduced into the conduction band (valence band) by doping ...
Electron mobility is almost always specified in units of cm 2 /(V⋅s). This is different from the SI unit of mobility, m 2 /(V⋅s). They are related by 1 m 2 /(V⋅s) = 10 4 cm 2 /(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same conductivity could come from a small number of ...
The effective mass is used in transport calculations, such as transport of electrons under the influence of fields or carrier gradients, but it also is used to calculate the carrier density and density of states in semiconductors. These masses are related but, as explained in the previous sections, are not the same because the weightings of ...
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...
The formula for evaluating the drift velocity of charge carriers in a material of constant cross-sectional area is given by: [1] =, where u is the drift velocity of electrons, j is the current density flowing through the material, n is the charge-carrier number density, and q is the charge on the charge-carrier.
Drift current density due to the charge carriers such as free electrons and holes is the current passing through a square centimeter area perpendicular to the direction of flow. (i) Drift current density J n {\displaystyle J_{n}} , due to free electrons is given by: