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Examples of MLC memories are MLC NAND flash, MLC PCM (phase-change memory), etc. For example, in SLC NAND flash technology, each cell can exist in one of the two states, storing one bit of information per cell. Most MLC NAND flash memory has four possible states per cell, so it can store two bits of information per cell. This reduces the amount ...
NAND flash also uses floating-gate transistors, but they are connected in a way that resembles a NAND gate: several transistors are connected in series, and the bit line is pulled low only if all the word lines are pulled high (above the transistors' V T). These groups are then connected via some additional transistors to a NOR-style bit line ...
Toshiba in 2007 [24] and Samsung in 2009 [25] announced the development of 3D V-NAND, a means of building a standard NAND flash bit string vertically rather than horizontally to increase the number of bits in a given area of silicon. Figure 6. Vertical NAND structure. A rough idea of the cross section of this is shown in figure 6.
Line chart showing the population of the town of Pushkin, Saint Petersburg from 1800 to 2010, measured at various intervals. A line chart or line graph, also known as curve chart, [1] is a type of chart that displays information as a series of data points called 'markers' connected by straight line segments. [2]
Samsung announced that it had begun mass production of multi-level cell (MLC) flash memory chips using a 10 nm process in 2013. [120] On 17 October 2016, Samsung Electronics announced mass production of SoC chips at 10 nm. [121] TSMC began commercial production of 10 nm chips in early 2016, before moving onto mass production in early 2017. [122]
Digital inverter quality is often measured using the voltage transfer curve (VTC), which is a plot of output vs. input voltage. From such a graph, device parameters including noise tolerance, gain, and operating logic levels can be obtained.
Micron and Intel announced that they were producing their first 20 nm MLC NAND flash on April 14, 2011. [ 18 ] In February 2012, Intel launched the SSD 520 series solid state drives using the SandForce SF-2200 controller with sequential read and write speeds of 550 and 520 MB/s respectively with random read and write IOPS as high as 80,000.
The best known plots of the Michaelis–Menten equation, including the double-reciprocal plot of / against /, [2] the Hanes plot of / against , [3] and the Eadie–Hofstee plot [4] [5] of against / are all plots in observation space, with each observation represented by a point, and the parameters determined from the slope and intercepts of the lines that result.