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In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.
is the thermal voltage, and n {\displaystyle n} is the ideality factor , also known as the quality factor , emission coefficient , or the material constant . The equation is called the Shockley ideal diode equation when the ideality factor n {\displaystyle n} equals 1, thus n {\displaystyle n} is sometimes omitted.
MOSFET (PMOS and NMOS) demonstrations Date Channel length Oxide thickness [1] MOSFET logic Researcher(s) Organization Ref; June 1960: 20,000 nm: 100 nm: PMOS: Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [2] [3] NMOS: 10,000 nm: 100 nm: PMOS Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [4] NMOS May 1965: 8,000 nm ...
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
The thermal coefficient of electrical circuit parts is sometimes specified as ppm/°C, or ppm/K. This specifies the fraction (expressed in parts per million) that its electrical characteristics will deviate when taken to a temperature above or below the operating temperature.
Where is the thermal conductivity, is the density of the medium, is the specific heat, =, the thermal diffusivity and is the rate of heat generation per unit volume. Heat diffuses from the source following the above equation and solution in an homogeneous medium follows a Gaussian distribution.
For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
The silver bridge may be interrupted by thermal expansion of the package; thus, disappearance of the shorting when the chip is heated and its reappearance after cooling is an indication of this problem. [3] Delamination and thermal expansion may move the chip die relative to the packaging, deforming and possibly shorting or cracking the bonding ...