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Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.
In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.
ASML is working on the next generation of EUV systems, with the first shipments for R&D purposes shipped to Intel in December 2023, and TSMC in late 2024. [19] [20] The platform is designated High-NA as it increases the numerical aperture (NA) from 0.33 to 0.55, [17] and each system costs approximately $370 million. [2] [20]
ASML has orders for more than a dozen, though TSMC, its biggest customer for EUV equipment, has said it does not need to use High NA tools for its A16 chips, expected to enter production in 2025 ...
AMSTERDAM (Reuters) -Dutch semiconductor equipment maker ASML said on Thursday it is shipping the first of its new "High NA" extreme ultraviolet lithography systems to Intel Corp. ASML published ...
ASML's High NA EUV tools, which are the size of a double decker bus and cost more than $350 million each, are expected to help enable new generations of smaller, faster chips.
Meteor Lake is built using four different fabrication nodes, including both Intel's own nodes and external nodes outsourced to fabrication competitor TSMC. The "Intel 4" process used for the CPU tile is the first process node in which Intel is utilising extreme ultraviolet (EUV) lithography, which is necessary for creating nodes 7nm and smaller ...
At the 2016 EUVL Workshop, ASML reported that the 0.33 NA NXE EUV tools would not be capable of standard single exposure patterning for the 11-13 nm half-pitch expected at the 5 nm node. [98] A higher NA of 0.55 would allow single exposure EUV patterning of fields which are half the 26 mm x 33 mm standard field size. [ 98 ]