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Resistor based on the sheet resistance of carbon film. Sheet resistance is the resistance of a square piece of a thin material with contacts made to two opposite sides of the square. [1] It is usually a measurement of electrical resistance of thin films that are uniform in thickness.
Metal foil resistor. In 1960, Felix Zandman and Sidney J. Stein [10] [full citation needed] presented a development of resistor film of very high stability. The primary resistance element of a foil resistor is a chromium nickel alloy foil several micrometers thick. Chromium nickel alloys are characterized by having a large electrical resistance ...
Metal foil resistor. In 1960, Felix Zandman and Sidney J. Stein [19] presented a development of resistor film of very high stability. The primary resistance element of a foil resistor is a chromium nickel alloy foil several micrometers thick. Chromium nickel alloys are characterized by having a large electrical resistance (about 58 times that ...
The resistance value of a film resistor is defined by its geometric dimensions (length, width, height) and the resistor material. A lateral cut in the resistor material by the laser narrows or lengthens the current flow path and increases the resistance value. The same effect is obtained whether the laser changes a thick-film or a thin-film ...
Thin-film printing technology is being used to apply solid-state lithium polymers to a variety of substrates to create unique batteries for specialized applications. Thin-film batteries can be deposited directly onto chips or chip packages in any shape or size. Flexible batteries can be made by printing onto plastic, thin metal foil, or paper. [57]
Manganin foil and wire is used in the manufacture of resistors, particularly ammeter shunts, because of its virtually zero temperature coefficient of resistance value [2] and long term stability. Several Manganin resistors served as the legal standard for the ohm in the United States from 1901 to 1990. [ 3 ]
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In this section a practical example of a c-TLM measurement is presented. By utilizing photolithography and sputter deposition, metallic c-TLM pads were deposited on the surface of a semiconductor thin film. The gap spacings of the c-TLM pads ranged between 20 μm and 200 μm while step sizes of 20 μm where chosen.
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