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2N3055. The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [ 1] Its numbering follows the JEDEC standard. [ 2]
Cross section of 2N2222 in metal TO-18 package, showing connection wires between external pins and die. The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.
2N107. 1950's PNP Transistors by General Electric. The 2N107 is an early germanium alloy junction PNP transistor developed by General Electric (GE) in 1955, to become GE's entry into the electronic hobbyist market successfully started with the CK722 transistor. Like the CK722, it enjoyed a long-standing popularity.
A 2N3904 in a TO-92 package on a breadboard (lower left) The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [ 1][ 2][ 3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor.
Electronic symbol. The 2N7000 is housed in a TO92 package, with lead 1 connected as the source, lead 2 as the gate, and lead 3 as the drain. The BS170 has the source and drain leads interchanged. The 2N7002 variant is packaged in a TO-236 surface-mount package. The 2N7000 is an N-channel, enhancement-mode MOSFETs used for low-power switching ...
A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. [ 1] It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit.
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