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  2. Magnetoresistive RAM - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistive_RAM

    Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory . [ 2 ]

  3. Spin-transfer torque memory - Wikipedia

    en.wikipedia.org/wiki/Spin-transfer_torque

    Spin-transfer torque can be used to flip the active elements in magnetic random-access memory. Spin-transfer torque magnetic random-access memory (STT-RAM or STT-MRAM) is a non-volatile memory with near-zero leakage power consumption which is a major advantage over charge-based memories such as SRAM and DRAM.

  4. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    The much larger sales of flash memory compared to the alternative NVRAMs support a much larger research and development effort. Flash memory is produced using semiconductor linewidths of 30 nm at Samsung (2007) while FeRAMs are produced in linewidths of 350 nm at Fujitsu and 130 nm at Texas Instruments (2007).

  5. Everspin Technologies - Wikipedia

    en.wikipedia.org/wiki/Everspin_Technologies

    Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States.It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory (MRAM) products, including Toggle MRAM and Spin-Transfer Torque MRAM (STT-MRAM) product families. [2]

  6. Non-volatile random-access memory - Wikipedia

    en.wikipedia.org/wiki/Non-volatile_random-access...

    Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...

  7. Random-access memory - Wikipedia

    en.wikipedia.org/wiki/Random-access_memory

    The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process.

  8. How Trump plans to cement control of government by ...

    www.aol.com/news/trump-plans-cement-control...

    President-elect Donald Trump is poised to seize greater control of the federal government than any modern president before him when he takes office on Monday, charging ahead with plans to ...

  9. Phase-change memory - Wikipedia

    en.wikipedia.org/wiki/Phase-change_memory

    Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass .