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Silicon–germanium. SiGe (/ ˈsɪɡiː / or / ˈsaɪdʒiː /), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si 1−x Ge x. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain -inducing ...
Bottom right: completed solar wafers. In electronics, a wafer (also called a slice or substrate) [ 1 ] is a thin slice of semiconductor, such as a crystalline silicon (c-Si, silicium), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate for microelectronic devices ...
Germanium differs from silicon in that the supply is limited by the availability of exploitable sources, while the supply of silicon is limited only by production capacity since silicon comes from ordinary sand and quartz. While silicon could be bought in 1998 for less than $10 per kg, [27] the price of germanium was almost $800 per kg. [27]
Silicon on insulator (SOI) technology has been used in AMD's 130 nm, 90 nm, 65 nm, 45 nm and 32 nm single, dual, quad, six and eight core processors made since 2001. [75] During the transition from 200 mm to 300 mm wafers in 2001, many bridge tools were used which could process both 200 mm and 300 mm wafers. [ 76 ]
A semiconductor is a material that is between the conductor and insulator in ability to conduct electical current. [1] In many cases their conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is ...
v. t. e. The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones. The method is named after Polish scientist Jan ...
NanoCleave is a technology developed by Silicon Genesis Corporation that separates the silicon via stress at the interface of silicon and silicon-germanium alloy. [18] ELTRAN is a technology developed by Canon which is based on porous silicon and water cut. [19] Seed methods [20] - wherein the topmost Si layer is grown directly on the insulator ...
The first transistor was successfully demonstrated on December 23, 1947, at Bell Laboratories in Murray Hill, New Jersey. Bell Labs was the research arm of American Telephone and Telegraph (AT&T). The three individuals credited with the invention of the transistor were William Shockley, John Bardeen and Walter Brattain.