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Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a ...
The PVD process can be carried out at lower deposition temperatures and without corrosive products, but deposition rates are typically lower. Electron-beam physical vapor deposition, however, yields a high deposition rate from 0.1 to 100 μm / min at relatively low substrate temperatures, with very high material utilization efficiency.
Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. [1] [2]
It was a supplier of chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), electrochemical deposition (ECD), ultraviolet thermal processing (UVTP), and surface preparation equipment used in the manufacturing of semiconductors.
When the vapor source is a liquid or solid, the process is called physical vapor deposition (PVD), [3] which is used in semiconductor devices, thin-film solar panels, and glass coatings. [4] When the source is a chemical vapor precursor, the process is called chemical vapor deposition (CVD).
This is a list of terms used in the manufacture of electronic micro-components. Many of the terms are already defined and explained in Wikipedia; this glossary is for looking up, comparing, and reviewing the terms. You can help enhance this page by adding new terms or clarifying definitions of existing ones.
A plasma is any gas in which a significant percentage of the atoms or molecules are ionized. Fractional ionization in plasmas used for deposition and related materials processing varies from about 10 −4 in typical capacitive discharges to as high as 5–10% in high-density inductive plasmas.
It is a process for growing crystalline layers to create complex semiconductor multilayer structures. [2] In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr).