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The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.
A Schottky diode is a single metal–semiconductor junction, used for its rectifying properties. Schottky diodes are often the most suitable kind of diode when a low forward voltage drop is desired, such as in a high-efficiency DC power supply. Also, because of their majority-carrier conduction mechanism, Schottky diodes can achieve greater ...
A schematic symbol for Schottky diodes 1N5822 Schottky diode with cut-open packaging. The semiconductor in the center makes a Schottky barrier against one metal electrode (providing rectifying action) and an ohmic contact with the other electrode. SS14 schottky diode in DO-214AC (SMA) (SOD-106) surface-mount package version of 1N5819 [1]
The Schottky diode, also known as the Schottky-barrier diode, was theorized for years, but was first practically realized as a result of the work of Atalla and Kahng during 1960–1961. [ 23 ] [ 24 ] They published their results in 1962 and called their device the "hot electron" triode structure with semiconductor-metal emitter. [ 25 ]
Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium In solid-state physics of semiconductors , a band diagram is a diagram plotting various key electron energy levels ( Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x . [ 1 ]
The most commonly used are Schottky diodes or p-n junctions. In the measurement process the steady-state diode reverse polarization voltage is disturbed by a voltage pulse . This voltage pulse reduces the electric field in the space charge region and allows free carriers from the semiconductor bulk to penetrate this region and recharge the ...
This allows the diode to operate at higher signal frequencies, at the expense of a higher forward voltage drop. Gold-doped diodes are faster than other p–n diodes (but not as fast as Schottky diodes). They also have less reverse-current leakage than Schottky diodes (but not as good as other p–n diodes). [43] [44] A typical example is the 1N914.
Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, [1] although this is obviously a function of size).