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As channel length is reduced, the effects of DIBL in the subthreshold region (weak inversion) show up initially as a simple translation of the subthreshold current vs. gate bias curve with change in drain-voltage, which can be modeled as a simple change in threshold voltage with drain bias. However, at shorter lengths the slope of the current ...
To combat drain-induced barrier lowering (DIBL), MOSFET substrate near source and drain region are heavily doped (p+ in case of NMOS and n+ in case of PMOS) to reduce the width of the depletion region in the vicinity of source/substrate and drain/substrate junctions (called halo doping to describe the limitation of this heavy doping to the ...
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation. [1] [2]
Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.
However, in certain cases, large isotopic effects are observed that cannot be accounted for by a semi-classical treatment, and quantum tunnelling is required. R. P. Bell developed a modified treatment of Arrhenius kinetics that is commonly used to model this phenomenon. [31]
Leakage may also mean an unwanted transfer of energy from one circuit to another. For example, magnetic lines of flux will not be entirely confined within the core of a power transformer; another circuit may couple to the transformer and receive some leaked energy at the frequency of the electric mains, which will cause audible hum in an audio application.
Gate-induced drain leakage, a leakage mechanism in MOSFETs due to large field effect in the drain junction Generic Interface Definition Language , an extension to CORBA IDL Topics referred to by the same term