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The collector–emitter current can be viewed as being controlled by the base–emitter current (current control), or by the base–emitter voltage (voltage control). These views are related by the current–voltage relation of the base–emitter junction, which is the usual exponential current–voltage curve of a p–n junction (diode).
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.
Figure 1: Basic NPN common collector circuit (neglecting biasing details).. In electronics, a common collector amplifier (also known as an emitter follower) is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer.
Early, is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base junction, for example, increases the collector–base depletion width, thereby decreasing the width of the charge carrier portion of the ...
The reverse bias safe operating area (or RBSOA) is the SOA during the brief time before turning the device into the off state—during the short time when the base current bias is reversed. As long as the collector voltage and collector current stay within the RBSOA during the entire turnoff, the transistor will be undamaged.
In electronics, the Gummel plot is the combined plot of the base and collector electric currents, and , of a bipolar transistor vs. the base–emitter voltage, , on a semi-logarithmic scale. This plot is very useful in device characterization because it reflects on the quality of the emitter–base junction while the base–collector bias, V bc ...
Another way to speed the base transit time of this type of transistor is to vary the band gap across the base, e.g. in the SiGe [epitaxial base] BJT the base of Si 1−η Ge η can be grown with η approx 0.2 by the collector and reducing to 0 near the emitter (keeping the dopant concentration constant). [1]: 307