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Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga 2 O 3. It is actively studied for applications in power electronics , phosphors , and gas sensing .
At room temperature, gallium metal is not reactive with air and water because it forms a passive, protective oxide layer. At higher temperatures, however, it reacts with atmospheric oxygen to form gallium(III) oxide, Ga 2 O 3. [4] Reducing Ga 2 O 3 with elemental gallium in vacuum at 500 °C to 700 °C yields the dark brown gallium(I) oxide, Ga ...
Gallium oxide may refer to Gallium(I) oxide, Ga 2 O; Gallium(III) oxide, Ga 2 O 3 This page was last edited on 8 September 2020, at 13:36 (UTC). Text is available ...
Gallium(I) oxide is a brown-black diamagnetic solid which is resistant to further oxidation in dry air. It starts decomposing upon heating at temperatures above 500 °C, and the decomposition rate depends on the atmosphere (vacuum, inert gas, air).
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A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
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At higher temperatures, however, it reacts with atmospheric oxygen to form gallium(III) oxide, Ga 2 O 3. [34] Reducing Ga 2 O 3 with elemental gallium in vacuum at 500 °C to 700 °C yields the dark brown gallium(I) oxide, Ga 2 O. [33]: 285 Ga 2 O is a very strong reducing agent, capable of reducing H 2 SO 4 to H 2 S.