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Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units , it is measured in m −3 . As with any density , in principle it can depend on position.
In electronics and semiconductor physics, the law of mass action relates the concentrations of free electrons and electron holes under thermal equilibrium.It states that, under thermal equilibrium, the product of the free electron concentration and the free hole concentration is equal to a constant square of intrinsic carrier concentration .
Electron mobility is almost always specified in units of cm 2 /(V⋅s). This is different from the SI unit of mobility, m 2 /(V⋅s). They are related by 1 m 2 /(V⋅s) = 10 4 cm 2 /(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same conductivity could come from a small number of ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states.
The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by μ or E F [1] for brevity. The Fermi level does not include the work required to remove the electron from wherever it came from.
where n 0 is the concentration of conducting electrons, p 0 is the conducting hole concentration, and n i is the material's intrinsic carrier concentration. The intrinsic carrier concentration varies between materials and is dependent on temperature. Silicon's n i, for example, is roughly 1.08×10 10 cm −3 at 300 kelvins, about room ...
where D is the diffusion coefficient for the electron in the considered medium, n is the number of electrons per unit volume (i.e. number density), q is the magnitude of charge of an electron, μ is electron mobility in the medium, and E = −dΦ/dx (Φ potential difference) is the electric field as the potential gradient of the electric potential.