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The structure providing the capacitance, as well as the transistors that control access to it, is collectively referred to as a DRAM cell. They are the fundamental building block in DRAM arrays. Multiple DRAM memory cell variants exist, but the most commonly used variant in modern DRAMs is the one-transistor, one-capacitor (1T1C) cell.
Reads and writes may thus be performed independent of the currently active state of the DRAM array, with the equivalent of four full DRAM rows being "open" for access at a time. This is an improvement over the two open rows possible in a standard two-bank SDRAM. (There is actually a 17th "dummy channel" used for some operations.)
A single read or write operation for the DDR4 SDRAM consists of a single 8n-bit-wide 4-clock data transfer at the internal DRAM core and 8 corresponding n-bit-wide half-clock-cycle data transfers at the I/O pins. [20] RDRAM was a particularly expensive alternative to DDR SDRAM, and most manufacturers dropped its support from their chipsets ...
The dram (alternative British spelling drachm; apothecary symbol ʒ or ℨ; [a] abbreviated dr) [4] [5]: C-6–C-7 [6] is a unit of mass in the avoirdupois system, and both a unit of mass and a unit of volume in the apothecaries' system. [5]
2011: In January, Samsung announced the completion and release for testing of a 2 GB [1] DDR4 DRAM module based on a process between 30 and 39 nm. [28] It has a maximum data transfer rate of 2133 MT/s at 1.2 V, uses pseudo open drain technology (adapted from graphics DDR memory [29]) and draws 40% less power than an equivalent DDR3 module. [28 ...
DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. The primary benefit of DDR3 SDRAM over its immediate predecessor DDR2 SDRAM, is its ability to transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher bandwidth ...
Dynamic random-access memory (DRAM) allowed replacement of a 4 or 6-transistor latch circuit by a single transistor for each memory bit, greatly increasing memory density at the cost of volatility. Data was stored in the tiny capacitance of each transistor and had to be periodically refreshed every few milliseconds before the charge could leak ...
Rambus DRAM was developed for high-bandwidth applications and was positioned by Rambus as replacement for various types of contemporary memories, such as SDRAM. RDRAM is a serial memory bus . DRDRAM was initially expected to become the standard in PC memory , especially after Intel agreed to license the Rambus technology for use with its future ...