Search results
Results from the WOW.Com Content Network
Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material.
As an application example, the steady-state space-charge-limited current across a piece of intrinsic silicon with a charge-carrier mobility of 1500 cm 2 /V-s, a relative dielectric constant of 11.9, an area of 10 −8 cm 2 and a thickness of 10 −4 cm can be calculated by an online calculator to be 126.4 μA at 3 V. Note that in order for this ...
Using the carrier concentration equations given above, the mass action law can be stated as = =, where E g is the band gap energy given by E g = E c − E v. The above equation holds true even for lightly doped extrinsic semiconductors as the product n p {\displaystyle np} is independent of doping concentration.
is the intrinsic carrier concentration in the semiconductor material,, are the carrier lifetimes of holes and electrons, respectively. [2] Increase in reverse bias does not allow the majority charge carriers to diffuse across the junction.
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...
An intrinsic semiconductor, also called a pure semiconductor, undoped semiconductor or i-type semiconductor, is a semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the properties of the material itself instead of the amount of impurities.
The effective mass is used in transport calculations, such as transport of electrons under the influence of fields or carrier gradients, but it also is used to calculate the carrier density and density of states in semiconductors. These masses are related but, as explained in the previous sections, are not the same because the weightings of ...
The amount of deflection depends on the speed of the carrier and its proximity to the ion. The more heavily a material is doped, the higher the probability that a carrier will collide with an ion in a given time, and the smaller the mean free time between collisions, and the smaller the mobility. When determining the strength of these ...