Ad
related to: metal oxide varistor cross reference list sheet material
Search results
Results from the WOW.Com Content Network
The most common modern type of varistor is the metal-oxide varistor (MOV). This type contains a ceramic mass of zinc oxide (ZnO) grains, in a matrix of other metal oxides, such as small amounts of bismuth, cobalt, manganese oxides, sandwiched between two metal plates, which constitute the electrodes of the device.
The IEEE 315 standard contains a list of Class Designation Letters to use for electrical and electronic assemblies. For example, the letter R is a reference prefix for the resistors of an assembly, C for capacitors, K for relays. Industrial electrical installations often use reference designators according to IEC 81346.
Example: A 3-unit long by 1-unit wide (aspect ratio = 3) sheet made of material having a sheet resistance of 21 Ω/sq would measure 63 Ω (since it is composed of three 1-unit by 1-unit squares), if the 1-unit edges were attached to an ohmmeter that made contact entirely over each edge.
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
GE's MOV was new in 1972 and fortuitously I stumbled across an article by 4 General Electric R&D people that sets forth how you get from "metal oxide" to "polycrystalline diodes-in-bulk" better than anything I knew before. The ref is: Metal-oxide varistor: a new way to suppress transients."
γ m and γ o are the respective surface energies of the metal and oxide γ mo is the surface energy between the two materials in contact The following table gives some common metals and their corresponding surface energies. All the metals are face-centered cubic crystal structure and these surface energies correspond to the (100) surface plane.
PMOS uses p-channel (+) metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. PMOS transistors operate by creating an inversion layer in an n-type transistor body. This inversion layer, called the p-channel, can conduct holes between p-type "source" and "drain" terminals.
A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond, but in a practical circuit the inductance of the wires leading to the device imposes a higher limit. This makes transient ...
Ad
related to: metal oxide varistor cross reference list sheet material