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A resonant-tunneling diode (RTD) is a diode with a resonant-tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions.
Tunneling applications include the tunnel diode, [5] quantum computing, flash memory, and the scanning tunneling microscope. Tunneling limits the minimum size of devices used in microelectronics because electrons tunnel readily through insulating layers and transistors that are thinner than about 1 nm.
The resonant-tunneling diode (RTD) has achieved some of the highest frequencies of any solid-state oscillator. [10] Another type of tunnel diode is a metal-insulator-insulator-metal (MIIM) diode, where an additional insulator layer allows "step tunneling" for more precise control of the diode. [11]
Unlike classical diodes, its current is carried by resonant tunneling through two or more potential barriers (see figure at right). Its negative resistance behavior can only be understood with quantum mechanics: As the confined state moves close to Fermi level, tunnel current increases. As it moves away, the current decreases.
The tunnel diode circuit (see diagram) is an example. [82] The tunnel diode TD has voltage controlled negative differential resistance. [54] The battery adds a constant voltage (bias) across the diode so it operates in its negative resistance range, and provides power to amplify the signal.
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor ( MOSFET ), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics .
Schematic representation (similar to band diagram) of an electron tunnelling through a barrier. In mesoscopic physics, a Coulomb blockade (CB), named after Charles-Augustin de Coulomb's electrical force, is the decrease in electrical conductance at small bias voltages of a small electronic device comprising at least one low-capacitance tunnel junction. [1]
In electronics, a tunnel junction is a barrier, such as a thin insulating layer or electric potential, between two electrically conducting materials. Electrons (or quasiparticles ) pass through the barrier by the process of quantum tunnelling .