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SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost. Typically, SRAM is used for the cache and internal registers of a CPU while DRAM is used for a computer's main memory.
For example, DDR3-2000 memory has a 1000 MHz clock frequency, which yields a 1 ns clock cycle. With this 1 ns clock, a CAS latency of 7 gives an absolute CAS latency of 7 ns. Faster DDR3-2666 memory (with a 1333 MHz clock, or 0.75 ns exactly; the 1333 is rounded) may have a larger CAS latency of 9, but at a clock frequency of 1333 MHz the ...
English: Circuit diagram of an SRAM cell, built with six MOSFETs. The bulk connection of all transistors is to ground, but is not shown from simplicity. The bulk connection of all transistors is to ground, but is not shown from simplicity.
s is a bit number in the status register (0 = C, 1 = Z, etc., see the list above) b is a bit number in a general-purpose or I/O register (0 = least significant, 7 = most significant) K6 is a 6-bit immediate unsigned constant (range: 0–63)
A timing diagram can contain many rows, usually one of them being the clock. It is a tool commonly used in digital electronics, hardware debugging, and digital communications. Besides providing an overall description of the timing relationships, the digital timing diagram can help find and diagnose digital logic hazards .
1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc. in September 1998, which offers a high-density alternative to traditional static random-access memory (SRAM) in embedded memory applications.
A CPU cache is a hardware cache used by the central processing unit (CPU) of a computer to reduce the average cost (time or energy) to access data from the main memory. [1] A cache is a smaller, faster memory, located closer to a processor core, which stores copies of the data from frequently used main memory locations.
This was generally described as "5-2-2-2" timing, as bursts of four reads within a page were common. When describing synchronous memory, timing is described by clock cycle counts separated by hyphens. These numbers represent t CL-t RCD-t RP-t RAS in multiples of the DRAM clock cycle time.