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  2. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    Barrier lowering increases as channel length is reduced, even at zero applied drain bias, because the source and drain form p–n junctions with the body, and so have associated built-in depletion layers associated with them that become significant partners in charge balance at short channel lengths, even with no reverse bias applied to ...

  3. Reverse short-channel effect - Wikipedia

    en.wikipedia.org/wiki/Reverse_short-channel_effect

    To combat drain-induced barrier lowering (DIBL), MOSFET substrate near source and drain region are heavily doped (p+ in case of NMOS and n+ in case of PMOS) to reduce the width of the depletion region in the vicinity of source/substrate and drain/substrate junctions (called halo doping to describe the limitation of this heavy doping to the ...

  4. Short-channel effect - Wikipedia

    en.wikipedia.org/wiki/Short-channel_effect

    In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation. [1] [2]

  5. Channel length modulation - Wikipedia

    en.wikipedia.org/wiki/Channel_length_modulation

    Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.

  6. Subthreshold conduction - Wikipedia

    en.wikipedia.org/wiki/Subthreshold_conduction

    Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

  7. Schottky barrier - Wikipedia

    en.wikipedia.org/wiki/Schottky_barrier

    In the opposite case of a negative voltage applied to both junctions the band diagram is bent upwards and holes can be injected and flow from the drain to the source. Setting the gate voltage to 0 V suppresses the tunneling current and enables only a lower current due to thermionic events. One of the main limitations of such a device is ...

  8. Threshold voltage - Wikipedia

    en.wikipedia.org/wiki/Threshold_voltage

    The conductive channel connects from source to drain at the FET's threshold voltage. Even more electrons attract towards the gate at higher V GS, which widens the channel. The reverse is true for the p-channel "enhancement-mode" MOS transistor. When V GS = 0 the device is “OFF” and the channel is open / non-conducting. The application of a ...

  9. Hot-carrier injection - Wikipedia

    en.wikipedia.org/wiki/Hot-carrier_injection

    In MOSFETs, hot electrons have sufficient energy to tunnel through the thin gate oxide to show up as gate current, or as substrate leakage current.In a MOSFET, when a gate is positive, and the switch is on, the device is designed with the intent that electrons will flow laterally through the conductive channel, from the source to the drain.

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