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In solid-state physics, metal-induced gap states are electron states that exist near the surface of a semiconductor due to the presence of a metal on the surface. They have energies that fall within the semiconductor's bandgap thus are forbidden in the bulk of the semiconductor.
It was noted in 1947 by John Bardeen that the Fermi level pinning phenomenon would naturally arise if there were chargeable states in the semiconductor right at the interface, with energies inside the semiconductor's gap. These would either be induced during the direct chemical bonding of the metal and semiconductor (metal-induced gap states ...
The nature of these metal-induced gap states and their occupation by electrons tends to pin the center of the band gap to the Fermi level, an effect known as Fermi level pinning. Thus, the heights of the Schottky barriers in metal–semiconductor contacts often show little dependence on the value of the semiconductor or metal work functions, in ...
The nature of these metal-induced gap states and their occupation by electrons tends to pin the center of the band gap to the Fermi level, an effect known as Fermi level pinning. Thus the heights of the Schottky barriers in metal–semiconductor contacts often show little dependence on the value of the semiconductor or metal work functions, in ...
This model includes a dipole layer at the interface between the two semiconductors which arises from electron tunneling from the conduction band of one material into the gap of the other (analogous to metal-induced gap states). This model agrees well with systems where both materials are closely lattice matched [11] such as GaAs/AlGaAs.
The closer f is to 1, the higher chance this state is occupied. The closer f is to 0, the higher chance this state is empty. The location of μ within a material's band structure is important in determining the electrical behaviour of the material. In an insulator, μ lies within a large band gap, far away from any states that are able to carry ...
Metal-induced gap states; Metal–semiconductor junction; O. Ohmic contact; P. ... Surface states This page was last edited on 2 February 2016, at 21:54 (UTC). ...
The common anion rule guesses that, since the valence band is related to anionic states, materials with the same anions should have very small valence band offsets. [citation needed] Tersoff [5] proposed the presence of a dipole layer due to induced gap states, by analogy to the metal-induced gap states in a metal–semiconductor junction.