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  2. Dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Dynamic_random-access_memory

    The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of the mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages.

  3. Memory cell (computing) - Wikipedia

    en.wikipedia.org/wiki/Memory_cell_(computing)

    The two most common types of DRAM memory cells since the 1980s have been trench-capacitor cells and stacked-capacitor cells. [25] Trench-capacitor cells are where holes (trenches) are made in a silicon substrate, whose side walls are used as a memory cell, whereas stacked-capacitor cells are the earliest form of three-dimensional memory (3D ...

  4. Semiconductor memory - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_memory

    The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...

  5. Applications of capacitors - Wikipedia

    en.wikipedia.org/wiki/Applications_of_capacitors

    Capacitors used for suppressing undesirable frequencies are sometimes called filter capacitors. They are common in electrical and electronic equipment, and cover a number of applications, such as: Glitch removal on direct current (DC) power rails; Radio frequency interference (RFI) removal for signal or power lines entering or leaving equipment

  6. Ferroelectric RAM - Wikipedia

    en.wikipedia.org/wiki/Ferroelectric_RAM

    Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .

  7. Deep reactive-ion etching - Wikipedia

    en.wikipedia.org/wiki/Deep_reactive-ion_etching

    in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]

  8. Texas City, Texas - Wikipedia

    en.wikipedia.org/wiki/Texas_City,_Texas

    The Port of Texas City, operated by the Port of Texas City / Texas City Terminal Railway, is the eighth-largest port in the United States and the third-largest in Texas, with waterborne tonnage exceeding 78 million net tons. The Texas City Terminal Railway Company provides an important land link to the port, handling over 25,000 carloads per year.

  9. EEStor - Wikipedia

    en.wikipedia.org/wiki/EEStor

    FuelPositive Corporation (formerly EEStor) [1] is a company based in Cedar Park, Texas, United States that claims to have developed a solid state polymer capacitor for electricity storage. [2] The company claims the device stores more energy than lithium-ion batteries at a lower cost than lead-acid batteries used in gasoline-powered cars.