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The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of the mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages.
The two most common types of DRAM memory cells since the 1980s have been trench-capacitor cells and stacked-capacitor cells. [25] Trench-capacitor cells are where holes (trenches) are made in a silicon substrate, whose side walls are used as a memory cell, whereas stacked-capacitor cells are the earliest form of three-dimensional memory (3D ...
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
in DRAM memory circuits, capacitor trenches may be 10–20 μm deep, in MEMS, DRIE is used for anything from a few micrometers to 0.5 mm. in irregular chip dicing, DRIE is used with a novel hybrid soft/hard mask to achieve sub-millimeter etching to dice silicon dies into lego-like pieces with irregular shapes. [7] [8] [9]
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .
Capacitors used for suppressing undesirable frequencies are sometimes called filter capacitors. They are common in electrical and electronic equipment, and cover a number of applications, such as: Glitch removal on direct current (DC) power rails; Radio frequency interference (RFI) removal for signal or power lines entering or leaving equipment
In the mid-1960s, the original 7400-series integrated circuits were introduced by Texas Instruments with the prefix "SN" to create the name SN74xx. Due to the popularity of these parts, other manufacturers released pin-to-pin compatible logic devices and kept the 7400 sequence number as an aid to identification of compatible parts.
The first random access regenerative capacitor memory was the Williams tube (1947). [2] As fitted to the first practical programmable digital computer, a single Williams tube held a total of 2560 bits, arranged in two 'pages'. One page was an array of thirty two 40-bit binary numbers, the capacity of a basic Williams-Kilburn Tube. [3]