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DDR4 RAM operates at a voltage of 1.2 V and supports frequencies between 800 and 1600 MHz (DDR4-1600 through DDR4-3200). Compared to DDR3, which operates at 1.5 V with frequencies from 400 to 1067 MHz (DDR3-800 through DDR3-2133), DDR4 offers better performance and energy efficiency .
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Development of 3D XPoint began around 2012. [8] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM ...
September — MRAM becomes a standard product offering at Freescale. October — Taiwan developers of MRAM tape out 1 Mbit parts at TSMC. October — Micron drops MRAM, mulls other memories. December — TSMC, NEC and Toshiba describe novel MRAM cells. December — Renesas Technology promotes a high performance, high-reliability MRAM technology.
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Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass .
The Zilog Z80 is perhaps the best known example, as it has an internal row counter R which supplies the address for a special refresh cycle generated after each instruction fetch. [59] In other systems, especially home computers, refresh was handled by the video circuitry as a side effect of its periodic scan of the frame buffer. [60]
Similarly, VLP DDR4 DIMMs are also marginally taller than their DDR3 equivalent at nearly 0.74 inches (19 mm). [ 17 ] As of Q2 2017, Asus has had a PCI-E based "DIMM.2", which has a similar socket to DDR3 DIMMs and is used to put in a module to connect up to two M.2 NVMe solid-state drives.
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