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Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage.
Genetic saturation occurs most rapidly on fast-evolving sequences, such as the hypervariable region of mitochondrial DNA, or in short tandem repeats such as on the Y-chromosome. [3] [4] In phylogenetics, saturation effects result in long branch attraction, where the most distant lineages have misleadingly short branch lengths. It also decreases ...
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The theory of solar cells explains the process by which light energy in photons is converted into electric current when the photons strike a suitable semiconductor device. The theoretical studies are of practical use because they predict the fundamental limits of a solar cell , and give guidance on the phenomena that contribute to losses and ...
In Shockley-Read-Hall recombination (SRH), also called trap-assisted recombination, the electron in transition between bands passes through a new energy state (localized state) created within the band gap by a dopant or a defect in the crystal lattice; such energy states are called traps. Non-radiative recombination occurs primarily at such sites.
The Shockley–Ramo theorem is a method for calculating the electric current induced by a charge moving in the vicinity of an electrode.Previously named simply the "Ramo Theorem", the modified name was introduced by D.S. McGregor et al. in 1998 [1] to recognize the contributions of both Shockley and Ramo to understanding the influence of mobile charges in a radiation detector.
The Shockley diode (named after physicist William Shockley) is a four-layer semiconductor diode, which was one of the first semiconductor devices invented. It is a PNPN diode with alternating layers of P-type and N-type material.