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Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s. The Shockley diode has a negative resistance characteristic. [1] It was largely superseded by the diac.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
The tome included Shockley's critical ideas of drift and diffusion and the differential equations that govern the flow of electrons in solid state crystals. Shockley's diode equation is also described. This seminal work became the reference text for other scientists working to develop and improve new variants of the transistor and other devices ...
By the Shockley diode equation, the current diverted through the diode is: = { []} [7] where I 0, reverse saturation current; n, diode ideality factor (1 for an ideal diode) q, elementary charge; k, Boltzmann constant
The mathematical description of the current is provided by the Shockley diode equation. The low current conducted under reverse bias and the large current under forward bias is an example of rectification.
When the voltage is non-zero, the concentrations of charge carriers (electrons and holes) change (see Shockley diode equation), and according to the authors the rate of recombination changes by a factor of exp(V/V c), where V c is the voltage equivalent of the temperature of the cell, or "thermal voltage", namely = /