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A JFET was first patented by Heinrich Welker in 1945. [4] The static induction transistor (SIT), a type of JFET with a short channel, was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950. Following Shockley's theoretical treatment on the JFET in 1952, a working practical JFET was built by George C. Dacey and Ian M. Ross ...
Following Shockley's theoretical treatment on JFET in 1952, a working practical JFET was made in 1953 by George C. Dacey and Ian M. Ross. [4] Japanese engineers Jun-ichi Nishizawa and Y. Watanabe applied for a patent for a similar device in 1950 termed static induction transistor (SIT). The SIT is a type of JFET with a short channel. [4]
Besides amplifiers, discrete JFET matched pairs are also used in the design of voltage controlled resistors, voltage controlled current sources, current to voltage converters, programmable gain circuits, voltmeters, phasers and a wide range of analog computational circuits like absolute value circuits These blocks often are designed with ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
A battery balancer or regulator is an electrical device in a battery pack that performs battery balancing. [2] Circuitry that includes designs to balance cell charges during battery pack recharging may be either active or passive in its design, [ 3 ] and is most often found in lithium-ion batteries , [ 4 ] e.g., for laptop computers, electrical ...
When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. [ 1 ] [ 2 ] This is somewhat confusing since pinch off applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias ...
The drain-to-source resistance of the JFET (R DS) and the drain resistor (R 1) form the voltage-divider network. The output voltage can be determined from the equation V out = V DC · R DS / (R 1 + R DS). An LTSpice simulation of the non-linearized VCR design verifies that the JFET resistance changes with a change in gate-to-source voltage (V ...
Bootstrapping is a technique in the field of electronics where part of the output of a system is used at startup. A bootstrap circuit is one where part of the output of an amplifier stage is applied to the input, so as to alter the input impedance of the amplifier. When applied deliberately, the intention is usually to increase rather than ...