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A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current -controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell ...
A silicon p–n junction in reverse bias. Connecting the p-type region to the negative terminal of the voltage supply and the n-type region to the positive terminal corresponds to reverse bias. If a diode is reverse-biased, the voltage at the cathode is comparatively higher than at the anode. Therefore, very little current flows until the diode ...
n {\displaystyle n} is the ideality factor, also known as the quality factor, emission coefficient, or the material constant. The equation is called the Shockley ideal diode equation when the ideality factor equals 1, thus is sometimes omitted. The ideality factor typically varies from 1 to 2 (though can in some cases be higher), depending on ...
1N400x rectifier diode. The 1N400x (or 1N4001 or 1N4000 [1]) series is a family of popular one- ampere general-purpose silicon rectifier diodes commonly used in AC adapters for common household appliances. Its blocking voltage varies from 50 volts (1N4001) to 1000 volts (1N4007). This JEDEC device number series is available in the DO-41 axial ...
Electron mobility. In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pushed or pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility.
Electron flow is the reverse of conventional current flow. [1][2][3] A diode is a two- terminal electronic component that conducts current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction and high (ideally infinite) resistance in the other.
p–n junction. Pin configuration. A: Anode, K: Cathode. Electronic symbol. A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p -type semiconducting layer to an n -type semiconducting layer.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).