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  2. Time-dependent gate oxide breakdown - Wikipedia

    en.wikipedia.org/wiki/Time-dependent_gate_oxide...

    A low constant failure rate which is random in nature. Wear out failures are increasing failures due to aging semiconductor degradation mechanisms. TDDB is one of the intrinsic wear out failure mechanisms. Performance of the IC components can be evaluated for semiconductor wear out mechanisms including TDDB for any given operating conditions.

  3. Failure of electronic components - Wikipedia

    en.wikipedia.org/wiki/Failure_of_electronic...

    In semiconductor devices, problems in the device package may cause failures due to contamination, mechanical stress of the device, or open or short circuits. Failures most commonly occur near the beginning and near the ending of the lifetime of the parts, resulting in the bathtub curve graph of failure rates.

  4. Reliability (semiconductor) - Wikipedia

    en.wikipedia.org/wiki/Reliability_(semiconductor)

    Reliability of a semiconductor device is the ability of the device to perform its intended function during the life of the device in the field. There are multiple considerations that need to be accounted for when developing reliable semiconductor devices: Semiconductor devices are very sensitive to impurities and particles. Therefore, to ...

  5. Negative-bias temperature instability - Wikipedia

    en.wikipedia.org/wiki/Negative-bias_temperature...

    The existence of two coexisting mechanisms has resulted in scientific controversy over the relative importance of each component, and over the mechanism of generation and recovery of interface states. In sub-micrometer devices nitrogen is incorporated into the silicon gate oxide to reduce the gate leakage current density and prevent boron ...

  6. Hot-carrier injection - Wikipedia

    en.wikipedia.org/wiki/Hot-carrier_injection

    This greater energy affects the mobility of charge carriers and as a consequence affects how they travel through a semiconductor device. [3] Hot electrons can tunnel out of the semiconductor material, instead of recombining with a hole or being conducted through the material to a collector. Consequent effects include increased leakage current ...

  7. High-temperature operating life - Wikipedia

    en.wikipedia.org/wiki/High-temperature_operating...

    The IC is usually monitored under stress and tested at intermediate intervals. This reliability stress test is sometimes referred to as a lifetime test, device life test or extended burn in test and is used to trigger potential failure modes and assess IC lifetime. There are several types of HTOL:

  8. Physics of failure - Wikipedia

    en.wikipedia.org/wiki/Physics_of_failure

    An approach to the design and development of reliable product to prevent failure, based on the knowledge of root cause failure mechanisms. The Physics of Failure (PoF) concept is based on the understanding of the relationships between requirements and the physical characteristics of the product and their variation in the manufacturing processes ...

  9. Failure cause - Wikipedia

    en.wikipedia.org/wiki/Failure_cause

    Rather than the simple description of symptoms that many product users or process participants might use, the term failure scenario / mechanism refers to a rather complete description, including the preconditions under which failure occurs, how the thing was being used, proximate and ultimate/final causes (if known), and any subsidiary or ...