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DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance.
The purpose of overclocking is to increase the operating speed of a given component. [3] Normally, on modern systems, the target of overclocking is increasing the performance of a major chip or subsystem, such as the main processor or graphics controller, but other components, such as system memory or system buses (generally on the motherboard), are commonly involved.
Mac OS X finally did away with the whole scheme, implementing a modern paged virtual memory scheme. A subset of the older memory model APIs still exists for compatibility as part of Carbon, but maps to the modern memory manager (a thread-safe malloc implementation) underneath. [6] Apple recommends that Mac OS X code use malloc and free "almost ...
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
With its original introduction as Mac OS X, the system brought a number of new capabilities to provide a more stable and reliable platform than its predecessor, the classic Mac OS. For example, pre-emptive multitasking and memory protection improved the system's ability to run multiple applications simultaneously without them interrupting or ...
RAM drives can access data with only the address, eliminating this latency. Second, the maximum throughput of a RAM drive is limited by the speed of the RAM, the data bus, and the CPU of the computer. Other forms of storage media are further limited by the speed of the storage bus, such as IDE (PATA), SATA, USB or FireWire. Compounding this ...
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
For example, an IBM PC with an Intel 80486 CPU running at 50 MHz will be about twice as fast (internally only) as one with the same CPU and memory running at 25 MHz, while the same will not be true for MIPS R4000 running at the same clock rate as the two are different processors that implement different architectures and microarchitectures ...